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FDV304P-F169 Datasheet, Equivalent, Digital FET.P-Channel Digital FET P-Channel Digital FET |
　
　
　
| Part | FDV304P-F169 |
|---|---|
| Description | P-Channel Digital FET |
| Feature | Digital FET, P-Channel
FDV304P, FDV304P -F169
General Description This P−Cha nnel enhancement mode field effect tran sistors is
produced using onsemi’s pr oprietary, high cell density, DMOS tech nology. This very high density process is tailored to minimize on−state resi stance at low gate drive conditions. Th is device is designed especially for ap plication in battery power applications such as notebook computers and cellula r phones. This device has excellent onâ ˆ’state resistance even at gate drive v oltages as low as 2. 5 V. Features • â ˆ’25 V, −0. 46 A Continuous, −1. 5 A Peak ♦ RDS(on) = 1. 1 W @ VGS = . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDV304P-F169 |
|---|---|
| Description | P-Channel Digital FET |
| Feature | Digital FET, P-Channel
FDV304P, FDV304P -F169
General Description This P−Cha nnel enhancement mode field effect tran sistors is
produced using onsemi’s pr oprietary, high cell density, DMOS tech nology. This very high density process is tailored to minimize on−state resi stance at low gate drive conditions. Th is device is designed especially for ap plication in battery power applications such as notebook computers and cellula r phones. This device has excellent onâ ˆ’state resistance even at gate drive v oltages as low as 2. 5 V. Features • â ˆ’25 V, −0. 46 A Continuous, −1. 5 A Peak ♦ RDS(on) = 1. 1 W @ VGS = . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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