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FDV304P-F169 Datasheet, Equivalent, Digital FET.

P-Channel Digital FET

P-Channel Digital FET

 

 

 

Part FDV304P-F169
Description P-Channel Digital FET
Feature Digital FET, P-Channel FDV304P, FDV304P -F169 General Description This P−Cha nnel enhancement mode field effect tran sistors is produced using onsemi’s pr oprietary, high cell density, DMOS tech nology.
This very high density process is tailored to minimize on−state resi stance at low gate drive conditions.
Th is device is designed especially for ap plication in battery power applications such as notebook computers and cellula r phones.
This device has excellent on state resistance even at gate drive v oltages as low as 2.
5 V.
Features
• 25 V, −0.
46 A Continuous, −1.
5 A Peak ♦ RDS(on) = 1.
1 W @ VGS = .
Manufacture ON Semiconductor
Datasheet
Download FDV304P-F169 Datasheet
Part FDV304P-F169
Description P-Channel Digital FET
Feature Digital FET, P-Channel FDV304P, FDV304P -F169 General Description This P−Cha nnel enhancement mode field effect tran sistors is produced using onsemi’s pr oprietary, high cell density, DMOS tech nology.
This very high density process is tailored to minimize on−state resi stance at low gate drive conditions.
Th is device is designed especially for ap plication in battery power applications such as notebook computers and cellula r phones.
This device has excellent on state resistance even at gate drive v oltages as low as 2.
5 V.
Features
• 25 V, −0.
46 A Continuous, −1.
5 A Peak ♦ RDS(on) = 1.
1 W @ VGS = .
Manufacture ON Semiconductor
Datasheet
Download FDV304P-F169 Datasheet

FDV304P-F169

FDV304P-F169
FDV304P-F169

FDV304P-F169

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