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FDD6N50TM-F085 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | FDD6N50TM-F085 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FDD6N50TM-F085 500V N-Channel MOSFET
FD D6N50TM-F085
500V N-Channel MOSFET
Feat ures
• 6A, 500V, RDS(on) = 0. 9Ω @VG S = 10 V • Low gate charge ( typical 12. 8 nC) • Low Crss ( typical 9 pF) â €¢ Fast switching • 100% avalanche te sted • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Complian t D Description These N-Channel enhanc ement mode power field effect transisto rs are produced using ON Semiconductor' s proprietary, planar stripe, DMOS tech nology. This advanced technology has be en especially tailored to minimize on-s tate resistance, provide superior switc hing performance, and withstand . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD6N50TM-F085 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FDD6N50TM-F085 500V N-Channel MOSFET
FD D6N50TM-F085
500V N-Channel MOSFET
Feat ures
• 6A, 500V, RDS(on) = 0. 9Ω @VG S = 10 V • Low gate charge ( typical 12. 8 nC) • Low Crss ( typical 9 pF) â €¢ Fast switching • 100% avalanche te sted • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Complian t D Description These N-Channel enhanc ement mode power field effect transisto rs are produced using ON Semiconductor' s proprietary, planar stripe, DMOS tech nology. This advanced technology has be en especially tailored to minimize on-s tate resistance, provide superior switc hing performance, and withstand . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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