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NTLJD3182FZ

ON Semiconductor

Power MOSFET and Schottky Diode


Description
NTLJD3182FZ Power MOSFET and Schottky Diode −20 V, −4.0 A, Single P−Channel & Schottky Barrier Diode, ESD Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ESD Protected High Curr...



ON Semiconductor

NTLJD3182FZ

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