MOSFET – P-Channel, POWERTRENCH)
-150 V, -0.8 A, 1.2 W
FDN86265P
General Description This P−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
Max rDS(on) = 1.2 W at VGS = –10 V, ID = −0.8 A
Max rDS(on) = 1.4 W at VGS = –6 V, I...
