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PD55035STR1-E Datasheet, Equivalent, LDMOS transistor.RF power LDMOS transistor RF power LDMOS transistor |
| Part | PD55035STR1-E |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | PD55035STR1-E
Datasheet
35 W, 12. 5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pi n connection Pin Connection 1 Drain 2 Source 3 Gate Features Order c ode Frequency VDD PD55035STR1-E 500 MHz 12. 5 V • Excellent thermal sta bility • Common source configuration • POUT = 35 W with 16. 9 dB at 500 MHz , 12. 5 V • New RF plastic package PO UT 35 W Gain 16. 9 dB Efficiency 62% Description The device is a common sour ce N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band com mercial and industrial . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | PD55035STR1-E |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | PD55035STR1-E
Datasheet
35 W, 12. 5 V, HF to 1 GHz RF power LDMOS transistor 1 3 2 PowerSO-10RF (straight lead) Pi n connection Pin Connection 1 Drain 2 Source 3 Gate Features Order c ode Frequency VDD PD55035STR1-E 500 MHz 12. 5 V • Excellent thermal sta bility • Common source configuration • POUT = 35 W with 16. 9 dB at 500 MHz , 12. 5 V • New RF plastic package PO UT 35 W Gain 16. 9 dB Efficiency 62% Description The device is a common sour ce N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band com mercial and industrial . |
| Manufacture | STMicroelectronics |
| Datasheet |
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