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STP60N043DM9 Datasheet, Equivalent, Power MOSFET.N-CHANNEL Power MOSFET N-CHANNEL Power MOSFET |
 
 
 
Part | STP60N043DM9 |
---|---|
Description | N-CHANNEL Power MOSFET |
Feature | STP60N043DM9
Datasheet
N-channel 600 V, 38 mΩ typ. , 56 A MDmesh DM9 Power MOSF ET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_no Zen Features Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A • Fast-recovery body diode • Worldwide best RDS(on) per area among silicon-based fast recovery devices • Low gate charge, input capacitance and resistance • 100% avalanche tested â €¢ Extremely high dv/dt ruggedness App lications • Power supplies and conver ters • LLC resonant converter Descri ption This N-channel Power MOSFET is ba sed on the most innovative sup . |
Manufacture | STMicroelectronics |
Datasheet |
Part | STP60N043DM9 |
---|---|
Description | N-CHANNEL Power MOSFET |
Feature | STP60N043DM9
Datasheet
N-channel 600 V, 38 mΩ typ. , 56 A MDmesh DM9 Power MOSF ET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_no Zen Features Order code VDS RDS(on) max. ID STP60N043DM9 600 V 43 mΩ 56 A • Fast-recovery body diode • Worldwide best RDS(on) per area among silicon-based fast recovery devices • Low gate charge, input capacitance and resistance • 100% avalanche tested â €¢ Extremely high dv/dt ruggedness App lications • Power supplies and conver ters • LLC resonant converter Descri ption This N-channel Power MOSFET is ba sed on the most innovative sup . |
Manufacture | STMicroelectronics |
Datasheet |
 
 
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