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RF3L05150CB4 Datasheet, Equivalent, LDMOS transistor.RF power LDMOS transistor RF power LDMOS transistor |
| Part | RF3L05150CB4 |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | RF3L05150CB4
Datasheet
150 W, 28/32 V, H F to 1 GHz RF power LDMOS transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gat e A
Features
Order code RF3L05150CB4
Frequency 520 MHz
VDD 28 V
POUT 150 W
Gain 23 dB
Efficiency 60 %
• Hig h efficiency and linear gain operations • Integrated ESD protection • Larg e positive and negative gate-source vol tage range for improved class C operati on • In compliance with the european directive 2002/95/EC Applications • 2-30 MHz HF or short wave communication • 30-88 MHz ground comm . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | RF3L05150CB4 |
|---|---|
| Description | RF power LDMOS transistor |
| Feature | RF3L05150CB4
Datasheet
150 W, 28/32 V, H F to 1 GHz RF power LDMOS transistor
1 2
5
4
LBB
3
Pin connection
Pin
Connection
1
Drain A
2
Drain B
3
Source (bottom side)
4
Gate B
5
Gat e A
Features
Order code RF3L05150CB4
Frequency 520 MHz
VDD 28 V
POUT 150 W
Gain 23 dB
Efficiency 60 %
• Hig h efficiency and linear gain operations • Integrated ESD protection • Larg e positive and negative gate-source vol tage range for improved class C operati on • In compliance with the european directive 2002/95/EC Applications • 2-30 MHz HF or short wave communication • 30-88 MHz ground comm . |
| Manufacture | STMicroelectronics |
| Datasheet |
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