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FDN302P

ON Semiconductor
Part Number FDN302P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET use...
Datasheet PDF File FDN302P PDF File

FDN302P
FDN302P

Overview
MOSFET – P-Channel, 2.
5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.
5 V specified MOSFET uses a rugged gate version of onsemi’s advanced POWERTRENCH process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5 V − 12 V).
Features • −20 V, −2.
4 A RDS(ON) = 0.
055 W @ VGS = −4.
5 V RDS(ON) = 0.
080 W @ VGS = −2.
5 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOTt−3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint • This is a Pb−Free and Halide Free Device Applications • Power Management • Load Switch • Battery Protection ABSO...


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