Up to 6 GHz Medium Power Silicon Bipolar Transistor
Description
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data
AT-42010
Features
High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz High Gain-Bandwidth Product:...
