PLANAR TRANSISTOR. HSB649A Datasheet

HSB649A TRANSISTOR. Datasheet pdf. Equivalent

Part HSB649A
Description SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSB649A Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSB649A SILICON PNP EPIT HSB649A Datasheet
Recommendation Recommendation Datasheet HSB649A Datasheet





HSB649A
HI-SINCERITY
MICROELECTRONICS CORP.
HSB649A
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2006.02.20
Page No. : 1/4
Description
Low frequency power amplifier complementary pair with HSD669A.
Absolute Maximum Ratings (TA=25°C)
TO-126ML
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation ....................................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................................................... -160 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current (DC) .................................................................................................................................. -1.5 A
IC Collector Current (Pulse) ................................................................................................................................. -3 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min. Typ. Max.
-180
-
-
-160
-
-
-5 -
-
- - -10
- - -1
- - -1.5
60 - 200
30 -
-
- 140 -
- 27 -
Unit
V
V
V
uA
V
V
MHz
pF
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSB649A
HSMC Product Specification



HSB649A
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2006.02.20
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
100 25oC
75oC
10
hFE @ VCE=5V
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
1000
100
125oC
25oC
75oC
1
1
10
100
1000
10000
Collector Current-IC (mA)
10
1
10 100 1000
Collector Current-IC (mA)
10000
10000
ON Voltage & Collector Current
VBE(ON) @VCE=5V
Capacitance & Reverse-Biased Voltage
100
1000
100
1
25oC
75oC
125oC
10 100 1000
Collector Current-IC (mA)
10000
100000
10000
1000
100
10
1
1
HSB649A
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10 100
Forward Biased Voltage (V)
1000
Cob
10
1
0.1
1 10
Reverse-Biased Voltage (V)
100
HSMC Product Specification





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