TYPE TRANSISTOR. HSD879D Datasheet

HSD879D TRANSISTOR. Datasheet pdf. Equivalent

Part HSD879D
Description SILICON NPN EPITAXIAL TYPE TRANSISTOR
Feature HI-SINCERITY MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec. No. : HD200.
Manufacture Hi-Sincerity Mocroelectronics
Datasheet
Download HSD879D Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HSD879D SILICON NPN EPIT HSD879D Datasheet
Recommendation Recommendation Datasheet HSD879D Datasheet





HSD879D
HI-SINCERITY
MICROELECTRONICS CORP.
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2006.02.20
Page No. : 1/4
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times.
TO-126ML
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.4 W
Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 30 V
BVCEX Collector to Emitter Voltage...................................................................................................................... 20 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 10 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current ............................................................................................................................................... 3 A
ICP Collector Current (Pluse) .................................................................................................................................. 5 A
Electrical Characteristics (TA=25°C)
Symbol
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE
*hFE
fT
Cob
Min. Typ. Max.
10 -
-
6- -
- - 100
- - 100
- 0.3 0.4
-
0.83
1.5
140 210
-
- 200 -
- 30 -
Unit
V
V
nA
nA
V
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
VCB=20V
VBE=4V
IC=3A, IB=60mA
VCE=-1V, IC=-2A
VCE=2V, IC=3A
VCE=10V, IC=50mA
VCB=10V, f=1KHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD879D
HSMC Product Specification



HSD879D
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2006.02.20
Page No. : 2/4
Current Gain & Collector Current
1000
125oC
75oC
25oC
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=50IB
100 75oC
hFE @ VCE=2V
125oC
25oC
100
1
10 100 1000
Collector Current-IC (mA)
10000
10
1
10 100 1000
Collector Current-IC (mA)
10000
ON Voltage & Collector Current
10.0
Cutoff Frequency & Collector Current
1000
100
1.0
VBE(on) @ VCE=2V
10
VCE=10V
0.1
1
10 100 1000
Collector Current
10000
Capacitance & Reverse-Biased Voltage
100
1
1
100
10 100
Collector Current
Safe Operating Area
1000
10
1
1
HSD879D
Cob
10
Reverse Biased Voltage (V)
10
1
0.1
100 1
PT=1ms
PT=100ms
PT=1S
10
Forward Voltage-VCE (V)
100
HSMC Product Specification





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