Band Switch. HSM2693A Datasheet

HSM2693A Switch. Datasheet pdf. Equivalent

Part HSM2693A
Description Silicon Epitaxial Planar Diode for Tuner Band Switch
Feature HSM2693A Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-094B (Z) Rev. 2 Jun. 1993 Fea.
Manufacture Hitachi Semiconductor
Datasheet
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HSM2693A
HSM2693A
Silicon Epitaxial Planar Diode for Tuner Band Switch
ADE-208-094B (Z)
Rev. 2
Jun. 1993
Features
Low forward resistance. (rf = 0.9 max)
Low capacitance. (C = 1.2pFmax)
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HSM2693A
Laser Mark
B4
Package Code
MPAK
Pin Arrangement
3
21
(Top View) 1 Anode
2 Anode
3 Cathode



HSM2693A
HSM2693A
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Power dissipation
Junction temperature
Storage temperature
Operation temperature
Note: Two device total
Symbol
VR
Pd*
Tj
Tstg
Topr
Value
35
150
125
–45 to +125
–20 to +60
Unit
V
mW
°C
°C
°C
Electrical Characteristics (Ta = 25°C)*
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
VR
IR
VF
C
Forward resistance
rf
Note: Per one device
35 — — V
IR = 10µA
— — 50 nA VR = 25V
— — 1.0 V
IF = 10mA
— — 1.2 pF VR = 6V, f = 1MHz
— — 0.9
IF = 2mA, f = 100MHz
2.0
f = 100MHz
1.5
1.0
0.5
0
10–4
10–3
Forward current IF (A)
10–2
Fig.1 Forward resistance Vs. Forward current
2





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