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HM628512 Datasheet, Equivalent, x 8-bit.4 M SRAM (512-kword x 8-bit) 4 M SRAM (512-kword x 8-bit) |
| Part | HM628512 |
|---|---|
| Description | 4 M SRAM (512-kword x 8-bit) |
| Feature | HM628512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system.
Features
• Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part | HM628512 |
|---|---|
| Description | 4 M SRAM (512-kword x 8-bit) |
| Feature | HM628512B Series
4 M SRAM (512-kword × 8-bit)
ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system.
Features
• Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation Active: 50 mW/MHz (. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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