1 MHz. BAR64-02 Datasheet


BAR64-02 MHz. Datasheet pdf. Equivalent


BAR64-02


Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR 64-02W
Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package

2

1

VES05991

Type BAR 64-02W

Marking Ordering Code M Q62702-A1215

Pin Configuration 1=C 2=A

Package SCD-80

Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 125°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)

Symbol

Value 200 100 250 150 - 55 ...+150 - 55 ...+150

Unit V mA mW °C °C

VR IF Ptot Tj Top Tstg

RthJA RthJS

≤ 220 ≤ 140

K/W

Junction - soldering point

1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11

Sep-07-1998 1998-11-01

BAR 64-02W

Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. Characteristics Breakdown voltage typ. max. 1.1

Unit

V(BR) VF

200 -

V mV

I (BR) = 5 µA
Forward voltage

I F = 50 mA
AC characteristics Diode capacitance

CT CC rf

-

0.23 0.09

0.35 -

pF

VR = 20 V, f = 1 MHz
Case capacitance

f = 1 MHz
Forward resistance Ω τrr 12.5 2.1 0.85 1.55 0.6 20 3.8 1.35 µs nH

I F = 1 mA, f = 100 MHz I F = 10 mA, f = 100 MHz I F = 100 mA, f = 100 MHz
Charge carrier life time

...



BAR64-02
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
Extremely small plastic SMD package
BAR 64-02W
2
1 VES05991
Type
BAR 64-02W
Marking Ordering Code
M Q62702-A1215
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS 125°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Pin Configuration
1=C
2=A
Package
SCD-80
Symbol
VR
IF
Ptot
Tj
Top
Tstg
RthJA
RthJS
Value
200
100
250
150
- 55 ...+150
- 55 ...+150
Unit
V
mA
mW
°C
°C
220
140
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109798-1-1919-081

BAR64-02
BAR 64-02W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Breakdown voltage
I(BR) = 5 µA
Forward voltage
IF = 50 mA
V(BR)
VF
200 -
-V
- - 1.1 mV
AC characteristics
Diode capacitance
VR = 20 V, f = 1 MHz
Case capacitance
f = 1 MHz
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
CT - 0.23 0.35 pF
CC - 0.09 -
rf
- 12.5 20
- 2.1 3.8
- 0.85 1.35
τrr - 1.55 - µs
Ls - 0.6 - nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109798-1-1919-081




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