BAV100 Diodes Datasheet

BAV100 Datasheet PDF, Equivalent


Part Number

BAV100

Description

Small Signal Diodes

Manufacture

General Semiconductor

Total Page 4 Pages
Datasheet
Download BAV100 Datasheet


BAV100
BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
VR
VR
VR
VR
Forward DC Current at Tamb = 25 °C
IF
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
I0
Repetitive Peak Forward Current
at f 50 Hz, Θ = 180 °C, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
IFRM
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
60
120
200
250
2501)
2001)
6251)
1
4001)
175
–65 to +175
Unit
V
V
V
V
mA
mA
mA
A
mW
°C
°C
4/98

BAV100
BAV100 THRU BAV103
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward voltage at IF = 100 mA
VF – – 1 V
Leakage Current
at VR = 50 V
at VR = 50 V, Tj = 100 °C
at VR = 100 V
at VR = 100 V, Tj = 100 °C
at VR = 150 V
at VR = 150 V, Tj = 100 °C
at VR = 200 V
at VR = 200 V, Tj = 100 °C
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
IR
IR
IR
IR
IR
IR
IR
IR
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
Dynamic Forward Resistance
at IF = 10 mA
Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
from IF = 30 mA through IR = 30 mA to
IR = 3 mA; RL = 100
Thermal Resistance
Junction to Ambient Air
rf
Ctot
trr
RthJA
5–
1.5 –
– 50
pF
ns
0.3751)
K/mW
1) Valid provided that electrodes are kept at ambient temperature.


Features BAV100 THRU BAV103 Small Signal Diodes M iniMELF FEATURES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available i n other case styles including: the DO-3 5 case with the type designations BAV19 to BAV21, the SOD-123 case with the ty pe designations BAV19W to BAV21W, and t he SOT-23 case with the type designatio n BAS19 - BAS21. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions i n inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATING S AND ELECTRICAL CHARACTERISTICS Rating s at 25 °C ambient temperature unless otherwise specified Symbol Reverse Vol tage BAV100 BAV101 BAV102 BAV103 VR VR VR VR IF I0 Value 60 120 200 250 2501) 2001) Unit V V V V mA mA Forward DC Current at Tamb = 25 °C Rectified Curr ent (Average) Half Wave Rectification w ith Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Repetitive Peak Forward Current at f ≥ 50 Hz, Θ = 180 °C, Tamb = .
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