MJ11015 Silicon Transistors Datasheet

MJ11015 Datasheet, PDF, Equivalent


Part Number

MJ11015

Description

High-Current Complementary Silicon Transistors

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download MJ11015 Datasheet


MJ11015
MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current
Complementary Silicon
Transistors
. . . for use as output devices in complementary general purpose
amplifier applications.
High DC Current Gain
hFE = 1000 (Min) @ IC 20 Adc
Monolithic Construction with Builtin Base Emitter Shunt
Resistor
Junction Temperature to + 200_C
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
Vdc
MJ11012
60
MJ11015/6
120
CollectorBase Voltage
VCB
Vdc
MJ11012
60
MJ11015/6
120
EmitterBase Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C @ TC = 100°C
Operating Storage Junction
Temperature Range
VEB
IC
IB
PD
TJ, Tstg
5
30
1
200
1.15
55 to + 200
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
Maximum Lead Temperature for Sol-
dering Purposes for 10 Seconds
RqJC
TL
0.87 °C/W
275 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
September, 2008 Rev. 5
1
http://onsemi.com
30 AMPERE DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 120 VOLTS, 200 WATTS
NPN
COLLECTOR
CASE
BASE
1
PNP
COLLECTOR
CASE
BASE
1
EMITTER 2
MJ11016
MJ11012
EMITTER 2
MJ11015
MARKING
DIAGRAM
1
2
TO204AA (TO3)
CASE 107
STYLE 1
MJ1101x = Device Code
x = 2, 5 or 6
G = PbFree Package
A = Location Code
YY = Year
WW = Work Week
MEX
= Country of Orgin
MJ1101xG
AYYWW
MEX
ORDERING INFORMATION
Device
Package
Shipping
MJ11012
MJ11012G
MJ11015
MJ11015G
MJ11016
MJ11016G
TO3
TO3
(PbFree)
TO3
TO3
(PbFree)
TO3
TO3
(PbFree)
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJ11012/D

MJ11015
PNP
MJ11015
BASE
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
COLLECTOR
NPN
MJ11012
MJ11016
COLLECTOR
BASE
8.0 k 40
8.0 k 40
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Breakdown Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 100 mAdc, IB = 0)
MJ11012
MJ11015, MJ11016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, RBE = 1k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 120 Vdc, RBE = 1k ohm)
(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5 Vdc, IC = 0)
CollectorEmitter Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 50 Vdc, IB = 0)
MJ11012
MJ11015, MJ11016
MJ11012
MJ11015, MJ11016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC=20Adc,VCE =5Vdc)
(IC = 30 Adc, VCE = 5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, IB = 300 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter Saturation Voltage
(IC = 20 A, IB = 200 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC=30A,IB =300mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrentGain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
Symbol
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(sat)
hfe
Min
60
120
1000
200
4
Max Unit
Vdc
mAdc
1
1
5
5
5 mAdc
1 mAdc
Vdc
3
4
Vdc
3.5
5
MHz
http://onsemi.com
2


Features MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ 11016 is a Preferred Device High-Curren t Complementary Silicon Transistors . . . for use as output devices in complem entary general purpose amplifier applic ations. • High DC Current Gain − hF E = 1000 (Min) @ IC − 20 Adc • Mono lithic Construction with Built−in Bas e Emitter Shunt Resistor • Junction T emperature to + 200_C MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MJ11012 60 MJ11015/6 120 Collector−Base V oltage VCB Vdc MJ11012 60 MJ11015/ 6 120 Emitter−Base Voltage Collecto r Current Base Current Total Device Dis sipation @ TC = 25°C Derate above 25° C @ TC = 100°C Operating Storage Junct ion Temperature Range VEB IC IB PD TJ, Tstg 5 30 1 200 1.15 −55 to + 200 Vdc Adc Adc W W/°C °C THERMAL CHARAC TERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−t o−Case Maximum Lead Temperature for S oldering Purposes for ≤ 10 Seconds RqJC TL 0.87 °C/W 275 .
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