2SJ315
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ315
DC−DC Converter
Unit: mm
FEATURES
z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode : Vth = −0.8~−2.0 V ...
