DatasheetsPDF.com

2SJ363

Hitachi Semiconductor
Part Number 2SJ363
Manufacturer Hitachi Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features • Low on-resistance • Low drive cu...
Datasheet PDF File 2SJ363 PDF File

2SJ363
2SJ363

Overview
2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features • Low on-resistance • Low drive current • 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1.
PW ≤ 100 µs, duty cycle ≤ 10% 2.
Value on the alumina ceramic board (12.
5×20×0.
7 mm) 3.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)