2SJ399
Silicon P-Channel MOS FET
ADE-208-267 1st. Edition
Application
Low frequency power switching
Features
Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch.
Outline
MPAK
3 1 2 D 1. Source 2. Gate 3. Drain
G
S
2SJ399
Absolute Maximum Ratings (Ta = 25°...
