2SK2876-01MR | Fuji Electric
N-channel MOS-FET
2SK2876-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Res.
N-channel MOS-FET
2SK2876-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
500V
1,5Ω
±6A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=.
- 2SK2876-01MR | Fuji Electric
- N-channel MOS-FET
- 2SK2876-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown.
- 2SK2876-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
500V
1,5Ω
±6A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Sourc.
