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2SK2955

Silicon N Channel MOS FET

Description

2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features Low on-resistance R DS =0.010 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2955 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source...

Hitachi Semiconductor

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