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2SK2963

Toshiba Semiconductor
Part Number 2SK2963
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Mar 30, 2005
Detailed Description 2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive an...
Datasheet PDF File 2SK2963 PDF File

2SK2963
2SK2963

Overview
2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4 V gate drive • Low drain-source ON resistance: RDS (ON) = 0.
5 Ω (typ.
) • High forward transfer admittance: |Yfs| = 1.
2 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) • Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (No...


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