2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-684G (Z) 8th. Edition February 1999 Features
Low on-resistance R DS(on) = 4.5 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Datasheet Title
Absolute Maximum...
