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2SK359

Hitachi Semiconductor

N-Channel MOSFET


Description
2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = –4 V Symbol VDSX* VGSS ID IG Pch Tch Tstg ...



Hitachi Semiconductor

2SK359

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