PowerTrench MOSFETs. FDG6332C Datasheet

FDG6332C Datasheet PDF, Equivalent


Part Number

FDG6332C

Description

20V N & P-Channel PowerTrench MOSFETs

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDG6332C Datasheet


FDG6332C Datasheet
September 2003
FDG6332C
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
DC/DC converter
Load switch
LCD display inverter
Features
Q1 0.7 A, 20V.
RDS(ON) = 300 m@ VGS = 4.5 V
RDS(ON) = 400 m@ VGS = 2.5 V
Q2 –0.6 A, –20V.
RDS(ON) = 420 m@ VGS = –4.5 V
RDS(ON) = 630 m@ VGS = –2.5 V
Low gate charge
High performance trench technology for extremely
low RDS(ON)
SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
Pin 1
D
G
S
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.32
FDG6332C
7’’
16
25
34
Complementary
Q1 Q2
20 –20
±12 ±12
0.7 –0.6
2.1 –2
0.3
–55 to +150
Units
V
V
A
W
°C
415 °C/W
Tape width
8mm
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDG6332C Rev C2 (W)

FDG6332C Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF /IGSSR Gate–Body Leakage, Forward
IGSSF /IGSSR Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
Q1
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Q2
Q1
Q2
Q1
Q2
gFS Forward Transconductance Q1
Q2
ID(on)
On–State Drain Current
Q1
Q2
Dynamic Characteristics
Ciss Input Capacitance
Q1
Q2
Coss Output Capacitance
Q1
Q2
Crss Reverse Transfer Capacitance Q1
Q2
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA,Ref. to 25°C
ID = –250 µA,Ref. to 25°C
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VGS = ± 12V , VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA,Ref. To 25°C
ID = –250 µA,Ref. to 25°C
VGS = 4.5 V, ID =0.7 A
VGS = 2.5 V, ID =0.6 A
VGS = 4.5 V, ID =0.7A,TJ=125°C
VGS = –4.5 V, ID = –0.6 A
VGS = –2.5 V, ID = –0.5 A
VGS=–4.5 V, ID =–0.6 A,TJ=125°C
VDS = 5 V ID = 0.7 A
VDS = –5 V ID = –0.6A
VGS = 4.5 V, VDS = 5 V
VGS = –4.5 V, VDS = –5 V
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
VDS=10 V, V GS= 0 V, f=1.0MHz
VDS=–10 V, V GS= 0 V, f=1.0MHz
For Q1:
VDS =10 V,
VGS= 4.5 V,
I D= 1 A
RGEN = 6
For Q2:
VDS =–10 V, I D= –1 A
VGS= –4.5 V, RGEN = 6
For Q1:
VDS =10 V, I D= 0.7 A
VGS= 4.5 V, RGEN = 6
For Q2:
VDS =–10 V, I D= –0.6 A
VGS= –4.5 V, RGEN = 6
20
–20
0.6
-0.6
1
–2
V
14 mV/°C
–14
1 µA
–1
±100 nA
±100 nA
1.1 1.5
V
–1.2 –1.5
–2.8 mV/°C
3
180 300
293 400
247 442
m
300 420
470 630
400 700
2.8 S
1.8
A
113 pF
114
34 pF
24
16 pF
9
5 10
5.5 11
7 15
14 25
9 18
6 12
1.5 3
1.7 3.4
1.1 1.5
1.4 2
0.24
0.3
0.3
0.4
ns
ns
ns
ns
nC
nC
nC
FDG6332C Rev C2 (W)


Features Datasheet pdf FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs Gene ral Description The N & P-Channel MOSFE Ts are produced using Fairchild Semicon ductor’s advanced PowerTrench process that has been especially tailored to m inimize on-state resistance and yet mai ntain superior switching performance. T hese devices have been designed to offe r exceptional power dissipation in a ve ry small footprint for applications whe re the bigger more expensive TSSOP-8 an d SSOP-6 packages are impractical. Fea tures • Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. R DS(ON) = 420 mΩ @ VGS = –4.5 V RDS( ON) = 630 mΩ @ VGS = –2.5 V • Low gate charge • High performance trenc h technology for extremely low RDS(ON) • SC70-6 package: small footprint (51 % smaller than SSOT-6); low profile (1m m thick) Applications • DC/DC conver ter • Load switch • LCD display inv erter S G D D Pin 1 1 2 3 Complementary 6 5 4 G S SC70-6 Absolute Maximum Ratings Symbol VDS.
Keywords FDG6332C, datasheet, pdf, Fairchild Semiconductor, 20V, N, &, P-Channel, PowerTrench, MOSFETs, DG6332C, G6332C, 6332C, FDG6332, FDG633, FDG63, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)