Power MOSFET. FDP20N40 Datasheet

FDP20N40 Datasheet PDF, Equivalent


Part Number

FDP20N40

Description

20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDP20N40 Datasheet PDF


FDP20N40 Datasheet
October 2002
FDH20N40 / FDP20N40
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
• PFC Boost
• Two-Switch Forward Converter
• Single Switch Forward Converter
• Flyback Converter
• Buck Converter
• High Speed Switching
Features
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Reduced rDS(ON)
• Reduced Miller Capacitance and Low Input Capacitance
• Improved Switching Speed with Low EMI
• 175°C Rated Junction Temperature
Package
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
JEDEC TO-220AB
Symbol
SOURCE
DRAIN
GATE
D
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Pulsed (Note 1)
Power dissipation
Derate above 25oC
Ratings
400
±30
20
14
80
273
1.82
TJ, TSTG
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw
-55 to 175
300 (1.6mm from case)
10ibf*in (1.1N*m)
Thermal Characteristics
RθJC
RθCS
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink, Flat, Greased Surface
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220)
0.55
0.24
40
62
Units
V
V
A
A
A
W
W/oC
oC
oC
oC/W
oC/W
oC/W
oC/W
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A,

FDP20N40 Datasheet
Package Marking and Ordering Information
Device Marking
FDH20N40
FDP20N40
Device
FDH20N40
FDP20N40
Package
TO-247
TO-220
Reel Size
Tube
Tube
Tape Width
-
-
Quantity
30
50
Electrical Characteristics TC = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max
Statics
BVDSS
Drain to Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
V/°C Reference to 25°C
ID = 1mA
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
VDS = 400V TC = 25oC
VGS = 0V
TC =150oC
VGS = ±20V
400
-
-
2.0
-
-
-
-
0.43
0.200
3.5
-
-
-
-
-
0.216
4.0
25
250
±100
Dynamics
gfs
Qg(TOT)
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
CISS
COSS
CRSS
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain MillerCharge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V, ID = 10A
VGS = 10V
VDS = 320V
ID = 20A
VDD = 200V
ID = 20A
RG = 10
RD = 15.4
VDS = 25V, VGS = 0V
f = 1MHz
10 -
-
- 35 42
- 10 12
- 12 14.4
- 12.4 -
- 32.5 -
- 30 -
- 34 -
- 1840 -
- 245 -
- 18 -
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Note 2)
IAR Avalanche Current
1100
-
-
-
-
20
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current (Note 1)
(Body Diode)
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
showing the
integral reverse G
p-n junction diode.
D
S
ISD = 20A
ISD = 20A, dISD/dt = 100A/µs
ISD = 20A, dISD/dt = 100A/µs
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 5.5mH, IAS = 20A
-
-
-
-
-
- 20
- 80
0.9 1.2
351 456
4.5 5.85
Units
V
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
FDH20N40 / FDP20N40 Rev. A


Features Datasheet pdf FDH20N40 / FDP20N40 October 2002 FDH20 N40 / FDP20N40 20A, 400V, 0.216 Ohm, N- Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Co nverter • Flyback Converter • Buck Converter • High Speed Switching Fea tures • Low Gate Charge Requirement Q g results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/ dt Ruggedness • Reduced rDS(ON) • R educed Miller Capacitance and Low Input Capacitance • Improved Switching Spe ed with Low EMI • 175°C Rated Juncti on Temperature Package JEDEC TO-247 SO URCE DRAIN GATE Symbol JEDEC TO-220AB D SOURCE DRAIN GATE G DRAIN (FLANGE) DRAIN (FLANGE) S Absolute Maximum Ra tings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Sou rce Voltage Gate to Source Voltage Drai n Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = Pulsed (Note 1 ) PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature Solde.
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