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NPN TRANSISTOR. 2SC4517A Datasheet

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NPN TRANSISTOR. 2SC4517A Datasheet






2SC4517A TRANSISTOR. Datasheet pdf. Equivalent




2SC4517A TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC4517A

Description

NPN TRANSISTOR



Feature


2SC4517/4517A Silicon NPN Triple Diffuse d Planar Transistor (High Voltage Switc hihg Transistor) sAbsolute maximum rati ngs (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrica l Characteristics Symbol ICBO IEBO V(BR )CEO hFE VCE(sat) VBE(sat) fT COB Condi tions VCB=800V VEB=7V IC=10mA VCE=4V, I C=1A IC=1A, IB=0.2A IC.
Manufacture

Sanken electric

Datasheet
Download 2SC4517A Datasheet


Sanken electric 2SC4517A

2SC4517A; =1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10 V, f=1MHz External Dimensions FM20(TO2 20F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0 .5 Symbol 2SC4517 2SC4517A VCBO VCEO V EBO IC IB PC Tj Tstg 900 550 7 3(Pulse6 ) 1.5 30(Tc=25°C) 150 –55 to +150 10 00 2SC4517 2SC4517A 100max 100max 550m in 10 to 30 0.5max 1.2max 6typ 35typ U nit µA V V 13.0min 16.9±0.3 8.4±0.2 µA V MHz pF 1.35±0.15 1.3.


Sanken electric 2SC4517A

5±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2. 54 2.2±0.2 2.4±0.2 sTypical Switchin g Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) 0.45 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.5max 2.54 3.9 B C E ±0. 2 I C – V CE Characteristics (Typica l) 3 40 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (T.


Sanken electric 2SC4517A

ypical) Collector-Emitter Saturation Vol tage V C E (s a t) (V ) Base-Emitter Sa turation Voltage V B E (s at) (V ) 1.5 I C /I B =5 Const. I C – V BE Temper ature Characteristics (Typical) 3 (V C E =4V) 300mA 200 mA Collector Curren t I C (A) 150 mA 2 100m A Collector C urrent I C (A) 1.0 V B E (sat) 2 1 I B =40mA 0.5 1 V C E (sat) 0 0.03 0 .05 0.1 0.5 1 5 0 0 .

Part

2SC4517A

Description

NPN TRANSISTOR



Feature


2SC4517/4517A Silicon NPN Triple Diffuse d Planar Transistor (High Voltage Switc hihg Transistor) sAbsolute maximum rati ngs (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrica l Characteristics Symbol ICBO IEBO V(BR )CEO hFE VCE(sat) VBE(sat) fT COB Condi tions VCB=800V VEB=7V IC=10mA VCE=4V, I C=1A IC=1A, IB=0.2A IC.
Manufacture

Sanken electric

Datasheet
Download 2SC4517A Datasheet




 2SC4517A
2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Symbol 2SC4517 2SC4517A Unit
Symbol
Conditions
2SC4517 2SC4517A Unit
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
900 1000
550
7
3(Pulse6)
1.5
30(Tc=25°C)
150
–55 to +150
V
V
V
A
A
W
°C
°C
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.25A
VCB=10V, f=1MHz
100max
100max
550min
10 to 30
0.5max
1.2max
6typ
35typ
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2
(A)
–0.45
ton
(µs)
0.7max
tstg
(µs)
4max
µA
µA
V
V
V
MHz
pF
tf
(µs)
0.5max
10.1±0.2
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
1.35±0.15
1.35±0.15
2.54
0.85
+0.2
-0.1
2.54
0.45
+0.2
-0.1
2.2±0.2
2.4±0.2
Weight : Approx 2.0g
BCE
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
3 400mA
300mA
200mA
150mA
2
100mA
1 IB=40mA
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
1.5
IC/IB=5 Const.
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
1.0
VBE(sat)
0.5
2
1
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
0
0.03 0.05
VCE(sat)
0.1 0.5 1
Collector Current IC(A)
5
0
0 0.2 0.4 0.6 0.8 1.0
Base-Emittor Voltage VBE(V)
hFE–IC Temperature Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
5
0.02
0.05
0.1 0.5
Collector Current IC(A)
1
3
t on• t stg• t f– I C Characteristics (Typical)
7
5
VCC 250V
IC:IB1:IB2=1:0.15:–0.45
1
0.5
tf
tstg
ton
0.1
0.2
0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
4
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5 100µs 50µs
1
0.5
Reverse Bias Safe Operating Area
10
5
1
0.5
Pc–Ta Derating
30
20
0.1
0.05
Without Heatsink
Natural Cooling
0.01
2
5 10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
112
0.1
0.05
0.01
50
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10
Without Heatsink
2SC4517 2SC4517A 2
100 500
Collector-Emitter Voltage VCE(V)
1000
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150











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