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2SC4510

INCHANGE
Part Number 2SC4510
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 28, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 DESCRIPTION ·High Collector-Emitter Sustaining Voltage...
Datasheet PDF File 2SC4510 PDF File

2SC4510
2SC4510

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.
) ·High Switching Speed ·High Reliability ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.
2A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.
2A 0.
8 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.
2A 1.
2 V ICBO Collector Cutoff Current VCB= 450V; IE= 0 0.
1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.
1 mA hFE DC Current Gain IC= 2A; VCE= 5V 25 65 Switching times ton Turn-on Time 1.
0 μs tstg Storage Time IC= 7.
5A , IB1= 0.
75A; IB2= -1.
5A; RL= 20Ω; PW=20μs; Duty Cycle≤2% 2.
5 μs tf Fall Time 0.
5 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is prese...


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