RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz
Features
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DU2812OV
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
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Absolute Maximum Ratings at 25°C
Electrical Characteristics
Parameter
Drain-Source Drain-Source Gate-Source Br...
