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IXBH10N170
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Description
www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS
Transistor
TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°...
IXYS Corporation
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IXBH10N170
High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
- IXYS Corporation
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