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IXBH16N170A
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
Description
Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS
Transistor
TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient...
IXYS Corporation
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IXBH16N170
BIMOSFET Monolithic Bipolar MOS Transistor
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IXBH16N170A
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
- IXYS Corporation
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