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IRF530N

N-channel TrenchMOS transistor

Description

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic enve...

NXP

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