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Power MOSFET. IRF540A Datasheet |
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Advanced Power MOSFET
IRF540A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052Ω
ID = 28 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
28
19.8
110
+_ 20
523
28
10.7
6.5
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.4
--
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
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IRF540A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
∆BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µ A
-- 0.11 -- V ΟC ID=250 µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=150ΟC
-- -- 0.052 Ω VGS=10V,ID=14A
O4
-- 22.56 -- Ω
-- 1320 1710
-- 325 380 pF
-- 148 170
-- 18 50
-- 18 50
ns
-- 90 180
-- 56 120
-- 60 78
-- 10.8 -- nC
-- 27.9 --
VDS=40V,ID=14A
O4
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
RG=9.1Ω
See Fig 13
O4 O5
VDS=80V,VGS=10V,
ID=28A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 28
Integral reverse pn-diode
A
-- 110
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=28A,VGS=0V
-- 132 --
-- 0.63 --
ns TJ=25ΟC ,IF=28A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=1mH, IAS=28A, VDD=25V, RG=27 Ω, Starting TJ =25 oC
O3 ISD <_ 28A, di/dt <_ 400A/µs, VDD<_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.08
0.06 VGS = 10 V
0.04
0.02
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
30 60 90
ID , Drain Current [A]
120
Fig 5. Capacitance vs. Drain-Source Voltage
2500
2000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1500
C oss
1000
C rss
500
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRF540A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
100
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-Drain Voltage [V]
2.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 20 V
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0 10 20 30 40 50 60 70
QG , Total Gate Charge [nC]
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