Power MOSFET. IRF540A Datasheet

IRF540A MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor IRF540A
Advanced Power MOSFET
IRF540A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052
ID = 28 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
100
28
19.8
110
+_ 20
523
28
10.7
6.5
107
0.71
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.4
--
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation


IRF540A Datasheet
Recommendation IRF540A Datasheet
Part IRF540A
Description Advanced Power MOSFET
Feature IRF540A; Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input .
Manufacture Fairchild Semiconductor
Datasheet
Download IRF540A Datasheet




Fairchild Semiconductor IRF540A
IRF540A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µ A
-- 0.11 -- V ΟC ID=250 µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=150ΟC
-- -- 0.052 VGS=10V,ID=14A
O4
-- 22.56 --
-- 1320 1710
-- 325 380 pF
-- 148 170
-- 18 50
-- 18 50
ns
-- 90 180
-- 56 120
-- 60 78
-- 10.8 -- nC
-- 27.9 --
VDS=40V,ID=14A
O4
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
RG=9.1
See Fig 13
O4 O5
VDS=80V,VGS=10V,
ID=28A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 28
Integral reverse pn-diode
A
-- 110
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=28A,VGS=0V
-- 132 --
-- 0.63 --
ns TJ=25ΟC ,IF=28A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=1mH, IAS=28A, VDD=25V, RG=27 , Starting TJ =25 oC
O3 ISD <_ 28A, di/dt <_ 400A/µs, VDD<_ BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature



Fairchild Semiconductor IRF540A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
102
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.08
0.06 VGS = 10 V
0.04
0.02
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
30 60 90
ID , Drain Current [A]
120
Fig 5. Capacitance vs. Drain-Source Voltage
2500
2000
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
1500
C oss
1000
C rss
500
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRF540A
Fig 2. Transfer Characteristics
102
175 oC
101
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 40 V
DS
3. 250 µs Pulse Test
100
2468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
102
101
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD , Source-Drain Voltage [V]
2.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 20 V
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0 10 20 30 40 50 60 70
QG , Total Gate Charge [nC]







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