PD - 9.911A
IRF9Z14S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l l
D
VDSS = -60V RDS(on) = 0.50Ω
G S
ID = -6.7A
Third Generation HEXFETs from International Rectifier utilize advanced pro...
