DatasheetsPDF.com

IRF9Z10

Vishay
Part Number IRF9Z10
Manufacturer Vishay
Description Power MOSFET
Published Jan 2, 2020
Detailed Description Power MOSFET IRF9Z10, SiHF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File IRF9Z10 PDF File

IRF9Z10
IRF9Z10

Overview
Power MOSFET IRF9Z10, SiHF9Z10 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration - 60 VGS = - 10 V 12 3.
8 5.
1 Single 0.
50 TO-220AB S G S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF9Z10PbF SiHF9Z10-E3 IRF9Z10 SiHF9Z10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at - 10 V TC = 25 °C TC = 100 °C VGS ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = - 25 V, starting TJ = 25 °C, L = 6.
23 mH, Rg = 25 , IAS = - 6.
7 A (see fig.
12).
c.
ISD  - 6.
7 A, dI/dt  90 A/μs, VDD  VDS, TJ  175 °C.
d.
1.
6 mm from case.
LIMIT - 60 ± 20 - 6.
7 - 4.
7 - 27 0.
29 140 - 6.
7 4.
3 43 - 4.
5 - 55 to + 175 300d 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)