IRFD310
Data Sheet July 1999 File Number
2324.4
0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are de...