UPG2009TB SPDT SWITCH Datasheet

UPG2009TB Datasheet, PDF, Equivalent


Part Number

UPG2009TB

Description

L-BAND HIGH POWER SPDT SWITCH

Manufacture

NEC

Total Page 12 Pages
Datasheet
Download UPG2009TB Datasheet


UPG2009TB
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
• Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• L-band digital cellular or cordless telephone
• BuletoothTM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
µPG2009TB-E3
Package
6-pin super minimold
Marking
G2U
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2009TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark  shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2004

UPG2009TB
µPG2009TB
PIN CONNECTIONS
(Top View)
34
25
16
(Bottom View)
43
52
61
Pin No.
1
2
3
4
5
6
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Control Voltage 1, 2
Input Power
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
Vcont1, 2
Pin
Ptot
TA
Tstg
Ratings
6.0 to +6.0 Note
+36
0.15
45 to +85
55 to +150
Unit
V
dBm
W
°C
°C
Note Vcont1-Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RENGE (TA = +25°C)
Parameter
Control Voltage (High)
Control Voltage (Low)
Symbol
Vcont(H)
Vcont(L)
MIN.
+2.7
0.2
TYP.
+2.8
0
MAX.
+3.0
+0.2
Unit
V
V
Pin Name
OUT1
GND
OUT2
Vcont2
IN
Vcont1
2 Data Sheet PG10191EJ02V0DS


Features DATA SHEET GaAs INTEGRATED CIRCUIT µPG2 009TB L-BAND HIGH POWER SPDT SWITCH DE SCRIPTION The µPG2009TB is an L-band S PDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone applica tion. The device can operate from 500 M Hz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V contr ol voltage. FEATURES • Low insertio n loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 G Hz • High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1. 0 GHz • 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION L-band digital cellular or cordless telephone • BuletoothTM, W-LAN and WL L applications ORDERING INFORMATION P art Number µPG2009TB-E3 Package 6-pin super minimold Marking G2U Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the t.
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