TO18 Case. TSTS7301 Datasheet

TSTS7301 Datasheet PDF, Equivalent


Part Number

TSTS7301

Description

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Manufacture

Vishay Telefunken

Total Page 5 Pages
PDF Download
Download TSTS7301 Datasheet


TSTS7301 Datasheet
TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their glass lenses provide a high ra-
diant intensity without external optics.
Features
D High radiant intensity
D Suitable for pulse operation
D Angle of half intensity ϕ = ± 12°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8642
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xTcase 25 °C
xtp/T = 0.5, tp 100 ms,
xTcase 25 °C
xtp 100 ms
xTcase 25 °C
Symbol
VR
IF
IFM
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
Document Number 81048
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

TSTS7301 Datasheet
TSTS730.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise Time
Fall Time
xTest Conditions
IF = 100 mA, tp 20 ms
IR = 100 mA
Symbol
VF
V(BR)
Min
5
Typ Max Unit
1.3 1.7 V
V
xVR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp 20 ms
Cj
fe
30 pF
7 mW
IF = 100 mA
TKfe
–0.8
%/K
ϕ ±12 deg
IF = 100 mA
IF = 100 mA
lp 950 nm
Dl 50 nm
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tr
400 ns
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tf
400 ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Radiant Intensity
Test Conditions
Type
Symbol Min Typ Max Unit
IF=100mA, tp=20ms
TSTS7300
TSTS7301
TSTS7302
TSTS7303
Ie 4 6.3
mW/sr
Ie 6.3 10 12.5 mW/sr
Ie 10 16 20 mW/sr
Ie 16 25 32 mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
600
RthJC
500
300
250
400
300
200
RthJA
100
200
150
RthJA
100
50
RthJC
0
0
94 8017 e
25 50 75 100 125
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
94 8018 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81048
Rev. 2, 20-May-99


Features Datasheet pdf TSTS730. Vishay Telefunken GaAs IR Emit ting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series a re infrared emitting diodes in standard GaAs technology in a hermetically seal ed TO–18 package. Their glass lenses provide a high radiant intensity withou t external optics. Features D D D D D D High radiant intensity Suitable for p ulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 n m High reliability Good spectral matchi ng to Si photodetectors 94 8642 Applic ations Radiation source in near infrare d range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forwar d Current Peak Forward Current Surge Fo rward Current Power Dissipation Junctio n Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Th ermal Resistance Junction/Case Test Con ditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR I F IFM IFSM PV PV Tj Tstg RthJA RthJC Va lue 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA mA A mW mW .
Keywords TSTS7301, datasheet, pdf, Vishay Telefunken, GaAs, IR, Emitting, Diodes, in, Hermetically, Sealed, TO18, Case, STS7301, TS7301, S7301, TSTS730, TSTS73, TSTS7, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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