TSTS7303 Datasheet PDF


Part Number

TSTS7303

Description

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Manufacture

Vishay Telefunken

Total Page 5 Pages
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Features Datasheet pdf TSTS730. Vishay Telefunken GaAs IR Emit ting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series a re infrared emitting diodes in standard GaAs technology in a hermetically seal ed TO–18 package. Their glass lenses provide a high radiant intensity withou t external optics. Features D D D D D D High radiant intensity Suitable for p ulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 n m High reliability Good spectral matchi ng to Si photodetectors 94 8642 Applic ations Radiation source in near infrare d range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forwar d Current Peak Forward Current Surge Fo rward Current Power Dissipation Junction .
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TSTS7303 Datasheet
TSTS730.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
The TSTS730. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO–18 package. Their glass lenses provide a high ra-
diant intensity without external optics.
Features
D High radiant intensity
D Suitable for pulse operation
D Angle of half intensity ϕ = ± 12°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8642
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xTcase 25 °C
xtp/T = 0.5, tp 100 ms,
xTcase 25 °C
xtp 100 ms
xTcase 25 °C
Symbol
VR
IF
IFM
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
Document Number 81048
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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