TN16 16A SCRs Datasheet

TN16 Datasheet, PDF, Equivalent


Part Number

TN16

Description

16A SCRs

Manufacture

STMicroelectronics

Total Page 9 Pages
Datasheet
Download TN16 Datasheet


TN16
Features
IT(RMS) =16 A
VDRM/VRRM = 600 to 1000 V
IGT = 25 mA
Description
The standard TN16 / TYNx16 16 A SCRs series
is suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
TN1625
TYN616, TYN816
16 A standard SCRs
A
G
K
A
A
KA
G
D2PAK
(TN1625-x00G)
K
A
G
TO-220AB
(TYNx16RG)
Table 1. Device summary
Parameter
TN1625-600G
TYN616RG
VDRM/VRRM
Sensitivity
600
25
TYN816RG
800
25
TN1625-1000G
1000
25
Unit
V
mA
November 2007
Rev 6
1/9
www.st.com
9

TN16
Characteristics
1 Characteristics
TN1625, TYN616, TYN816
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
RMS on-state current (180 °Conduction angle)
Average on-state current (180 °Conduction angle)
Non repetitive surge peak on-state current
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 110 °C
Tc = 110 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Value
16
10
200
190
180
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test Conditions
Value
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
VD = 67 % VDRM Gate open
ITM = 32 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
2
25
1.3
0.2
40
60
500
1.6
0.77
23
5
2
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 4. Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
Parameter
S = 01 cm2
D2PAK
TO-220AB
Value
1.1
45
60
Unit
°C/W
°C/W
S = copper surface under tab
2/9


Features Features ■ IT(RMS) =16 A ■ VDRM/VRRM = 600 to 1000 V ■ IGT = 25 mA Descri ption The standard TN16 / TYNx16 16 A S CRs series is suitable for general purp ose applications. Using clip assembly t echnology, they provide a superior perf ormance in surge current capabilities. TN1625 TYN616, TYN816 16 A standard SC Rs A G K A A KA G D2PAK (TN1625-x00G ) K A G TO-220AB (TYNx16RG) Table 1. Device summary Parameter TN1625-600G TYN616RG VDRM/VRRM Sensitivity 600 25 TYN816RG 800 25 TN1625-1000G 1000 25 Unit V mA November 2007 Rev 6 1/9 www.st.com 9 Characteristics 1 Charac teristics TN1625, TYN616, TYN816 Tabl e 2. Absolute ratings (limiting values) Symbol Parameter IT(RMS) IT(AV) ITS M I2t dI/dt IGM PG(AV) Tstg Tj VRGM RM S on-state current (180 °Conduction an gle) Average on-state current (180 °C onduction angle) Non repetitive surge peak on-state current I2t Value for fus ing Critical rate of rise of on-state c urrent IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average g.
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