TN3725A Switching Transistor Datasheet

TN3725A Datasheet, PDF, Equivalent


Part Number

TN3725A

Description

NPN Switching Transistor

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
Datasheet
Download TN3725A Datasheet


TN3725A
Discrete POWER & Signal
Technologies
TN3725A
C
BE
TO-226
MMPQ3725
BE B
BE
E
B
E CCC
CC
C
C
C
SOIC-16
NPN Switching Transistor
This device is designed for high speed core driver applications
up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
Max
TN3725A
1.0
8.0
50
125
MMPQ3725
1.0
8.0
125
240
Units
W
mW/°C
°C/W
°C/W
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

TN3725A
Electrical Characteristics
Symbol
Parameter
NPN Switching Transistor
(continued)
TA= 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CES
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
ICES Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, VBE = 0
IC = 10 µA, ICE = 0
IE = 10 µA, IC = 0
VCB = 60 V, IE = 0
VCB = 60 V, IE = 0, TA = 100°C
VCE = 80 V, VEB = 0
40
60
60
6.0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC =100mA,VCE =1.0V,TA = -55°C
IC = 300 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC =500mA,VCE =1.0V,TA = -55°C
IC = 800 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 300 mA, IB = 30 mA
IC = 500 mA, IB = 50 mA
IC = 800 mA, IB = 80 mA
IC = 1.0 A, IB = 100 mA
30
60
30
40
35
20
20
25
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo Input Capacitance
IC = 50 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
300
SWITCHING CHARACTERISTICS (except MMPQ3725)
ton Turn-on Time
td Delay Time
tr Rise Time
toff Turn-off Time
ts Storage Time
tf Fall Time
VCC = 30 V, VBE(off) = 3.8 V,
IC = 500 mA, IB1 = 50 mA
VCC = 30 V, IC = 500 mA
IB1 = IB2 = 50 mA
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
V
V
V
V
1.7 µA
120 µA
10 µA
150
0.25 V
0.26 V
0.4 V
0.52 V
0.8 V
0.95 V
0.76 V
0.86 V
1.1 V
1.2 V
1.5 V
1.7 V
MHz
10 pF
55 pF
35 ns
10 ns
30 ns
60 ns
50 ns
30 ns


Features TN3725A / MMPQ3725 Discrete POWER & Sig nal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching T ransistor This device is designed for h igh speed core driver applications up t o collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Rati ngs Symbol VCEO VCBO VEBO IC TJ, Tstg C ollector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unles s otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temp erature Range *These ratings are limit ing values above which the serviceabili ty of any semiconductor device may be i mpaired. NOTES: 1) These ratings are ba sed on a maximum junction temperature o f 150 degrees C. 2) These are steady st ate limits. The factory should be consu lted on applications involving pulsed o r low duty cycle operations. Thermal C haracteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise no.
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