TN6716A Purpose Amplifier Datasheet

TN6716A Datasheet, PDF, Equivalent


Part Number

TN6716A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
Datasheet
Download TN6716A Datasheet


TN6716A
TN6716A
CBE
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1.2A. Sourced from Process 38. See TN6715A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5
IC Collector Current - Continuous
2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
TA=25°C
1
8
50
125
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor
Pr38 TN6716A.SAM revC

TN6716A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC = 1 mA
IC = 100 µA
IE = 1 mA
VCB = 40 V
VEB = 5 V
60 V
60 V
5V
100 nA
10 uA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
IC = 50 mA, VCE = 1 V
IC = 250 mA, VCE = 1 V
IC = 500 mA, VCE = 1 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1.0 V
80
50 250
20
-
0.5 V
0.35
1.2 V
SMALL SIGNAL CHARACTERISTICS
Ccb Output Capacitance
hfe Small Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA,VCE = 5 V,f=20MHz
2.5
30 pF
25 MHz
© 1997 Fairchild Semiconductor
Pr38 TN6716A.SAM revC


Features TN6716A TN6716A CB E TO-226 NPN Gen eral Purpose Amplifier This device is d esigned for general purpose medium powe r amplifiers and switches requiring col lector currents to 1.2A. Sourced from P rocess 38. See TN6715A for characterist ics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Co llector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Value 60 60 5 2 -55 t o +150 Units V V V A °C Operating an d Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semico nductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) The se are steady state limits. The factory should be consulted on applications in volving pulsed or low duty cycle operat ions. Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic TA=25°C PD RθJC RθJA Total Device Dissipation Derate.
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