|
|
SSB APPLICATIONS. TH513 Datasheet |
|
|
|
SD1733 (TH513)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
...... OPTIMIZED FOR SSB
30 MHz
50 VOLTS
COMMON EMITTER
GOLD METALLIZATION
POUT = 75 W MIN. WITH 14.0 dB GAIN
.380 4L STUD (M135)
epoxy sealed
ORDER CODE
SD1733
B RA ND IN G
TH513
PIN CONNECTION
DESCRIPTION
The SD1733 is a 50 V Class AB epitaxial silicon
NPN planar transistor designed primarily for SSB
and VHF communications. This device utilizes
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Parameter
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance
November 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
110
55
4.0
3.25
127
+200
− 65 to +150
Unit
V
V
V
A
W
°C
°C
2.0 °C/W
1/4
|
SD1733 (TH513)
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCES
BVCEO
BVEBO
hFE
IC = 100mA
IC = 200mA
IE = 10mA
VCE = 6V
VBE = 0V
IB = 0mA
IC = 0mA
IC = 1.4A
DYNAMIC
S ymb o l
Test Conditions
POUT f = 30 MHz
VCE = 50 V
GP* POUT = 75 W PEP VCE = 50 V
IMD*
ηc*
POUT = 75 W PEP
POUT = 75 W PEP
VCE = 50 V
VCE = 50 V
COB f = 1 MHz
VCB = 50 V
Note: * f1 = 30.00 MHz, f2 = 30. 001 MHz
Min.
110
55
4.0
19
Va l u e
Typ. Max.
——
——
——
— 50
Unit
V
V
V
—
Value
Min. Typ. Max.
75 — —
14 — —
— — −30
37 — —
— — 100
Unit
W
dB
dBc
%
pF
2/4
|
TEST CIRCUIT
SD1733 (TH513)
C1 :
C2 :
C3, C4 :
C5 :
C6 :
C7 :
C9 :
C10 :
C11 :
20 - 500pF
50 - 500pF
3.9nF
100nF
2.2µF
56pF
100pF
20 - 150pF
20 - 500pF
L1 : 3 Turns, Diameter Wire 1.5mm, Int. Diameter 7mm,
Pitch 2.5mm
L2 : 22µH Choke Coil
L3 : 4 Turns, Diameter Wire 1.5mm, Int. Diameter 10mm,
Pitch 2.5mm
L4 : Ferroxcube Choke Coil
L5 : 7 Turns, Diameter Wire 1.5mm, Int. Diameter 12mm,
Pitch 2.5mm
R2 : 33Ω
R3 : 4.7Ω
BIAS CIRCUIT
3/4
|
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |