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PTF180901E

Infineon Technologies AG

GSM/EDGE RF Power FET


Description
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single...



Infineon Technologies AG

PTF180901E

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