N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
Description
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 FEATURES * LOW RDS(ON) - 3Ω 7
ZVNL110G
D
PARTMARKING DETAIL - ZVNL110 D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage...
