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MG200Q1US41

Toshiba
Part Number MG200Q1US41
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG200Q1US41 PDF File

MG200Q1US41
MG200Q1US41

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
5µs (Max.
) trr = 0.
5µs (Max.
) l Low saturation voltage : VCE (sat) = 4.
0V (Max.
) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal : M4/M6 / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDE...


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