TOSHIBA IGBT Module Silicon N - Channel IGBT
MG25J1BS11
High Power Switching Applications Motor Control Applications
MG25J1BS11
Unit: mm
Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Collector power dissipat...
