MITSUBISHI SEMICONDUCTOR
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
OUTLINE DRAWING
FEATURES
Low noise figure @ f=12GHz MGF4316G : NF min. =0. 80dB (MAX. ) MGF4319G : NF min. =0. 50dB (MAX. ) High associated gain Gs=12. 0 dB (MIN. ) @ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA Refer to Bias Procedure
GD-4
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO...