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MGFC38V5867

Mitsubishi

C band internally matched power GaAs FET


Description
< C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) syste...



Mitsubishi

MGFC38V5867

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