Advanced Power MOSFET
IRFU410A
IRFU410A
BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A
TO-220
Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID...
